Vishay (IRFBG20PBF) Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm

Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through HoleProduct OverviewThe IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with singleconfiguration. This third generation Power MOSFET from Vishay provides thedesigner with the best combination of fast switching, ruggedized device design,low ON-resistance. The package is universally preferred at power dissipationlevels to approximately 50W. The low thermal contribute to its wide acceptancethroughout the industry.Dynamic dV/dt ratingRepetitive avalanche ratedFast switchingEase of parallelingSimple drive requirementsApplicationsIndustrial, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 1.3ADrain Source Voltage Vds: 1kVDrain Source On State Resistance: 11.5ohmOn Resistance Rds(on): 11.5ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 50WTransistor Case Style: TO-220ABPower Dissipation: 50WNo. of Pins: 3PinsOperating Temperature Max: 150°C