Vishay (SIHG14N50D-GE3) Power MOSFET, N Channel, 500 V, 14 A, 0.32 ohm

Power MOSFET, N Channel, 500 V, 14 A, 0.32 ohm, TO-247AC, Through HoleProduct OverviewThe SIHG14N50D-GE3 is a D series N-channel enhancement-mode Power MOSFETsuitable for consumer electronics, telecom power supply and battery chargerapplications.Low area specific ON-resistanceLow input capacitance (CISS)Reduced capacitive switching lossesHigh body diode ruggednessAvalanche energy rated (UIS)Simple gate drive circuitryLow figure-of-merit (FOM) Ron x QgFast switchingHalogen-freeApplicationsIndustrial, Power Management, Portable Devices, Consumer ElectronicsProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 14ADrain Source Voltage Vds: 500VDrain Source On State Resistance: 0.32ohmOn Resistance Rds(on): 0.32ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 208WTransistor Case Style: TO-247ACPower Dissipation: 208WNo. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: DMSL: MSL 1 - Unlimited