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Silicon Carbide MOSFET, Single, N Channel, 23 A, 900 V, 0.12 ohm, TO-247Product InformationMOSFET Module Configuration: SingleChannel Type: N ChannelContinuous Drain Current Id: 23ATransistor Polarity: N ChannelDrain Source Voltage Vds: 900VOn Resistance Rds(on): 0.12ohmDrain Source On State Resistance: 0.12ohmRds(on) Test Voltage: 15VTransistor Case Style: TO-247Gate Source Threshold Voltage Max: 2.1VPower Dissipation Pd: 97WNo. of Pins: 3PinsOperating Temperature Max: 150°CPower Dissipation: 97WProduct Range: C2M