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512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive

Name: 512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive
Brand: Samsung
SKU: MZ-VL45120
Price: 1100.00 ZAR
Availability: InStock

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R1,100.00

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Regional areas:	3-4 business days
Remote areas:	3-5 business days

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HugePC90

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Product details

Condition

New

Location

South Africa

Brand

Samsung

Product code

MZ-VL45120

Bob Shop ID

638240862

512GB
Triple Core
NVMe 1.4
PCIe 4.0 x4
Sequential Read: 3,500 MB/s
Sequential Write: 2,500 MB/s
Random Read: 430,000 IOPS
Random Write: 400,000 IOPS

Specifications
Product Code	MZ-VL45120
Solid-State-Drive
Capacity	512 GB
Overprovisioning	35.2 GB / 7.4 %
Released	2022
Part Number	MZVL4512HBLU-00BL7
Market	Consumer
Physical
Form Factor	M.2 2280 (Single-Sided)
Interface	PCIe 4.0 x4
Protocol	NVMe 1.4
Controller
Manufacturer	Marvell
Name	88SS1322 Whistler Plus
Architecture	Arm Cortex -R5
Core Count	Triple-Core
Foundry	TSMC FinFET
Process	12 nm
Flash Channels	4 @ 1,200 MT/s
Chip Enables	4
Controller Features	HMB (enabled)
NAND Flash
Manufacturer	Samsung
Name	V-NAND V6
Part Number	K9OUGY8J5B-CCK0
Type	TLC
Technology	128-layer
Speed	1200 MT/s
Capacity	1 chip @ 4 Tbit
Toggle	4
Topology	Charge Trap
Die Size	102 mm²
Die Size	(5.0 Gbit/mm²)
Dies per Chip	8 dies @ 512 Gbit
Planes per Die	2
Decks per Die	1
Word Lines	136 per NAND String
Word Lines	94.1% Vertical Efficiency
Read Time (tR)	45 µs
Program Time (tProg)	390 µs
Block Erase Time (tBERS)	3.5 ms
Die Read Speed	711 MB/s
Die Write Speed	82 MB/s
Endurance	3000 P/E Cycles
(up to)
Page Size	16 KB
DRAM Cache
Type	None
Host-Memory-Buffer (HMB)	64 MB
Performance
Sequential Read	3,500 MB/s
Sequential Write	2,500 MB/s
Random Read	430,000 IOPS
Random Write	400,000 IOPS

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