Infineon (IPW60R041P6FKSA1) Power MOSFET, N Channel, 600 V, 77.5 A

Power MOSFET, N Channel, 600 V, 77.5 A, 0.037 ohm, TO-247, Through HoleProduct Overview600V CoolMOS P6 power transistor, a revolutionary technology for high voltagepower MOSFETs. Designed according to the superjunction (SJ) principle andsuitable for use in PFC stages, hard switching PWM stages and resonant switchingstages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecomand UPS.Increased MOSFET dv/dt ruggednessExtremely low losses due to very low FOM Rdson*Qg and EossVery high commutation ruggednessEasy to use/driveHalogen free moulded compoundQualified for industrial grade applications according to JEDEC (J-STD20 andJESD22)Product InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 77.5ADrain Source Voltage Vds: 600VDrain Source On State Resistance: 0.037ohmOn Resistance Rds(on): 0.037ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 481WTransistor Case Style: TO-247Power Dissipation: 481WNo. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: CoolMOS P6