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Power MOSFET, N Channel, 100 V, 42 A, 0.0178 ohm, TO-252 (DPAK), Surface MountProduct OverviewThe FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench®process. It has been especially tailored to minimize the ON-state resistance andswitching loss. The G-S Zener has been added to enhance ESD voltage level.Very low Qg and Qgd compared to competing Trench technologiesFast switching speed100% UIL tested6kV typical HBM ESD protection levelProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 42ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.0178ohmOn Resistance Rds(on): 0.0178ohmTransistor Case Style: TO-252 (DPAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 1.5VPower Dissipation Pd: 54WPower Dissipation: 54WNo. of Pins: 3PinsOperating Temperature Max: 150°CMSL: MSL 1 - Unlimited