Vishay (IRF640PBF) Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm

Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220AB, Through HoleProduct OverviewThe IRF640PBF is a 200V N-channel Power MOSFET, third generation power MOSFETprovides the designer with the best combination of fast switching, ruggedizeddevice design and low on-resistance. The package is universally preferred forall commercial-industrial applications at power dissipation levels toapproximately 50W.Dynamic dV/dt ratingRepetitive avalanche rated175°C Operating temperatureEasy to parallelSimple drive requirementApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 18ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.18ohmOn Resistance Rds(on): 0.18ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 125WTransistor Case Style: TO-220ABPower Dissipation: 125WNo. of Pins: 3PinsOperating Temperature Max: 150°C