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Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface MountProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelContinuous Drain Current Id: 2.1ADrain Source Voltage Vds: 500VDrain Source On State Resistance: 3.9ohmOn Resistance Rds(on): 3.9ohmTransistor Case Style: TO-252 (DPAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 5VPower Dissipation Pd: 2.5WPower Dissipation: 2.5WNo. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: QFET