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Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through HoleProduct OverviewThe RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. Thisprocess, which uses feature sizes approaching those of LSI integrated circuitsgives optimum utilization of silicon, resulting in outstanding performance. TheMOSFET is designed for applications such as switching regulators, switchingconverters, motor drivers and relay drivers. This transistor can be operateddirectly from integrated circuits. This product is general usage and suitablefor many different applications.Temperature compensating PSPICE® modelPeak current vs. pulse width curveUIS Rated curve175°C Rated junction temperatureApplicationsPower Management, Motor Drive & ControlProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 60VContinuous Drain Current Id: 50ADrain Source On State Resistance: 0.022ohmOn Resistance Rds(on): 0.022ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 131WPower Dissipation: 131WNo. of Pins: 3PinsOperating Temperature Max: 175°C