Stmicroelectronics (NDP6060) Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm

Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through HoleProduct OverviewThe NDP6060 is a N-channel enhancement-mode Power FET produced using high celldensity DMOS technology. This very high density process has been especiallytailored to minimize ON-state resistance, provide superior switching performanceand withstand high energy pulses in the avalanche and commutation modes. It isparticularly suited for low voltage applications such as DC-to-DC converters,PWM motor controls and other battery powered circuits where fast-switching, lowin-line power loss and resistance to transients are needed. The rugged internalsource-drain diode can eliminates the need for an external Zener diode transientsuppressor.Critical DC electrical parameters specified at elevated temperatureHigh density cell design for extremely low RDS (ON)Product InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 48ADrain Source Voltage Vds: 60VDrain Source On State Resistance: 0.025ohmOn Resistance Rds(on): 0.025ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 2.9VPower Dissipation Pd: 100WTransistor Case Style: TO-220ABPower Dissipation: 100WNo. of Pins: 3PinsOperating Temperature Max: 175°C