Stmicroelectronics (IRF630) Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm

Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through HoleProduct OverviewThe IRF630 from STMicroelectronics is a through hole, 200V N channel meshoverlay II power MOSFET in TO-220 package. This power MOSFET is designed usingthe company's consolidated strip layout based MESH OVERLAY process which matchesand improves the performances. Features extremely high dv/dt capability, verylow intrinsic capacitances and gate charge minimized.Drain to source voltage (Vds) is 200VGate to source voltage of ±20VContinuous drain current (Id) is 9APower dissipation (Pd) is 75WOperating junction temperature range from -65°C to 150°CGate threshold voltage of 3VLow on state resistance of 350mohm at Vgs 10VApplicationsPower Management, Consumer Electronics, Portable Devices, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 9ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.4ohmOn Resistance Rds(on): 0.4ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 100WTransistor Case Style: TO-220Power Dissipation: 100WNo. of Pins: 3PinsOperating Temperature Max: 150°C