Stmicroelectronics (STW26NM60N) Power MOSFET, N Channel, 600 V, 20 A

Power MOSFET, N Channel, 600 V, 20 A, 0.135 ohm, TO-247, Through HoleProduct OverviewThe STW26NM60N is a 600V N-channel Power MOSFET developed using the secondgeneration of MDmesh technology. This revolutionary Power MOSFET associates avertical structure to the company's strip layout to yield one of the world'slowest on-resistance and gate charge. It is therefore suitable for the mostdemanding high efficiency converters. Improved gate charge and lower powerdissipation to meet today's challenging efficiency requirements.100% Avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsIndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 20ADrain Source Voltage Vds: 600VDrain Source On State Resistance: 0.135ohmOn Resistance Rds(on): 0.135ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 140WTransistor Case Style: TO-247Power Dissipation: 140WNo. of Pins: 3PinsOperating Temperature Max: 150°C