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Silicon Carbide MOSFET, Single, 60 A, 1.2 kV, 0.035 ohm, HiP247Product InformationMOSFET Module Configuration: SingleChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 60ADrain Source Voltage Vds: 1.2kVDrain Source On State Resistance: 0.035ohmOn Resistance Rds(on): 0.035ohmTransistor Case Style: HiP247No. of Pins: 3PinsRds(on) Test Voltage: 18VGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 389WPower Dissipation: 389WOperating Temperature Max: 200°C