Vishay (IRF9610PBF) Power MOSFET, P Channel, 200 V, 1.75 A, 3 ohm

Power MOSFET, P Channel, 200 V, 1.75 A, 3 ohm, TO-220AB, Through HoleProduct OverviewThe IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFETtechnology. The efficient geometry and unique processing of the HEXFET designachieve very low on-state resistance combined with high transconductance andextreme device ruggedness. The package is universally preferred for allcommercial-industrial applications at power dissipation levels to approximately50W.Dynamic dV/dt ratingFast switching150°C Operating temperatureEasy to parallelSimple drive requirementApplicationsPower ManagementProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelContinuous Drain Current Id: 1.75ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 3ohmOn Resistance Rds(on): 3ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 20WTransistor Case Style: TO-220ABPower Dissipation: 20WNo. of Pins: 3PinsOperating Temperature Max: 150°C