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Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through HoleProduct OverviewThe IRFBG30PBF is a third generation N-channel Power MOSFET is designed with thecombination of fast switching, low on-resistance and cost effectiveness.Dynamic dV/dt RatingRepetitive Avalanche RatedFast SwitchingEase of ParallelingSimple Drive Requirements175°C Operating TemperatureApplicationsAudio, Signal Processing, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 3.1ADrain Source Voltage Vds: 1kVDrain Source On State Resistance: 5ohmOn Resistance Rds(on): 5ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 125WTransistor Case Style: TO-220ABPower Dissipation: 125WNo. of Pins: 3PinsOperating Temperature Max: 150°C