Wolfspeed (C2M0160120D) Silicon Carbide MOSFET, Single, N Channel, 19 A

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247Product OverviewThe C2M0160120D is a 1.2kV N-channel enhancement mode silicon carbide PowerMOSFET of high speed switching with low capacitances. The Z-FET MOSFET is idealfor high-frequency applications. The silicon carbide power MOSFET featureshigher system efficiency, reduced cooling requirements and increased systemswitching frequency.High blocking voltage with low RDS (on)Easy to parallel and simple to driveResistant to latch-upHalogen-freeApplicationsPower Management, Alternative EnergyProduct InformationMOSFET Module Configuration: SingleChannel Type: N ChannelContinuous Drain Current Id: 19ATransistor Polarity: N ChannelDrain Source Voltage Vds: 1.2kVOn Resistance Rds(on): 0.16ohmDrain Source On State Resistance: 0.16ohmRds(on) Test Voltage: 20VTransistor Case Style: TO-247Gate Source Threshold Voltage Max: 2.6VPower Dissipation Pd: 125WNo. of Pins: 3PinsOperating Temperature Max: 150°CPower Dissipation: 125WProduct Range: C2M