Wolfsppeed (C2M1000170D) Silicon Carbide MOSFET, Single, N Channel, 4.9 A

Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247Product OverviewThe C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channelsilicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiCMOSFET technology, high blocking voltage with low On resistance, high speedswitching with low capacitances, easy to parallel and simple to drive, avalancheruggedness, ultra low drain gate capacitance, higher system efficiency, reducedcooling requirements and increased system reliability. Applications includeauxiliary power supplies, switch mode power supplies and high voltage capacitiveloads.Drain to source voltage (Vds) of 1.7kVContinuous drain current of 5APower dissipation of 69WOperating junction temperature of -55°C to 150°CLow on state resistance of 1ohm at Vgs of 20VApplicationsPower Management, Consumer Electronics, Portable Devices, IndustrialProduct InformationMOSFET Module Configuration: SingleChannel Type: N ChannelContinuous Drain Current Id: 4.9ATransistor Polarity: N ChannelDrain Source Voltage Vds: 1.7kVOn Resistance Rds(on): 0.95ohmDrain Source On State Resistance: 0.95ohmRds(on) Test Voltage: 20VTransistor Case Style: TO-247Gate Source Threshold Voltage Max: 2.4VPower Dissipation Pd: 69WNo. of Pins: 3PinsOperating Temperature Max: 150°CPower Dissipation: 69W