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Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface MountProduct OverviewThe IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advancedprocessing techniques to achieve extremely low ON-resistance per silicon area.This benefit combined with the fast switching speed and ruggedized devicedesign, provides an extremely efficient and reliable operation. Thesurface-mount power package capable of accommodating die size up to HEX-4. Itprovides the highest power capability and the lowest possible ON-resistance inany existing surface-mount package. It is suitable for high current applicationsbecause of its low internal connection resistance and can dissipate up to 2W ina typical surface-mount application.Advanced process technologyDynamic dV/dt ratingRepetitive avalanche allowed up to TjmaxApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 100ADrain Source Voltage Vds: 75VDrain Source On State Resistance: 0.0078ohmOn Resistance Rds(on): 0.0078ohmTransistor Case Style: TO-263 (D2PAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 3.8WPower Dissipation: 3.8WNo. of Pins: 3PinsOperating Temperature Max: 175°CMSL: MSL 1 - Unlimited