Infineon (IRFB3306PBF) Power MOSFET, N Channel, 60 V, 160 A, 0.0042 ohm

Power MOSFET, N Channel, 60 V, 160 A, 0.0042 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB3306PBF is a HEXFET® single N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityApplicationsPower Management, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 160ADrain Source Voltage Vds: 60VDrain Source On State Resistance: 0.0042ohmOn Resistance Rds(on): 0.0042ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 230WTransistor Case Style: TO-220ABPower Dissipation: 230WNo. of Pins: 3PinsOperating Temperature Max: 175°C