Infineon (IRFB7430PBF) Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through HoleProduct OverviewSingle N-channel StrongIRFET power MOSFET ideal for low frequency applicationsrequiring performance and ruggedness. It is suitable for use in brushed motordrive applications, BLDC motor drive applications, battery powered circuits,half-bridge and full-bridge topologies, synchronous rectifier applications,resonant mode power supplies, OR-ing and redundant power switches, DC/DC andAC/DC converters and DC/AC inverters applications.Improved gate, avalanche and dynamic dV/dt ruggednessFully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and dI/dt capabilityHigh-current rating and high-current carrying capability packageProduct qualification according to JEDEC standardSofter body-diode compared to previous silicon generationIndustry standard qualification levelHigh performance in low frequency applicationsIncreased power densityStandard pinout allows for drop in replacementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 195ADrain Source Voltage Vds: 40VDrain Source On State Resistance: 0.001ohmOn Resistance Rds(on): 0.001ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 2.2VPower Dissipation Pd: 375WTransistor Case Style: TO-220ABPower Dissipation: 375WNo. of Pins: 3PinsOperating Temperature Max: 175°C