Infineon (IRF1407PBF) Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm

Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through HoleProduct OverviewThe IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latestprocessing techniques to achieve extremely low ON-resistance per silicon area.Additional features of this HEXFET® power MOSFET are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliabledevice for use in a wide variety of applications.Advanced process technologyDynamic dV/dt ratingRepetitive avalanche allowed up to TjmaxApplicationsMotor Drive & Control, Automotive, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 130ADrain Source Voltage Vds: 75VDrain Source On State Resistance: 0.0078ohmOn Resistance Rds(on): 0.0078ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 330WTransistor Case Style: TO-220ABPower Dissipation: 330WNo. of Pins: 3PinsOperating Temperature Max: 175°C