Infineon (IRF8010PBF) Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm

Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through HoleProduct OverviewThe IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers lowgate-to-drain charge to reduce switching losses. It is suitable for highfrequency DC-to-DC converters.Fully characterized capacitance including effective COSS to simplify designFully characterized avalanche voltage and currentDynamic dV/dt ratingFast switchingFully avalanche ratingApplicationsPower Management, Motor Drive & ControlProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 80ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.015ohmOn Resistance Rds(on): 0.015ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 260WTransistor Case Style: TO-220ABPower Dissipation: 260WNo. of Pins: 3PinsOperating Temperature Max: 175°C