Infineon (IRF5305PBF) Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through HoleProduct OverviewThe IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package.This MOSFET features extremely low on resistance per silicon area, dynamic dv/dtrating, rugged, fast switching and fully avalanche rated as a result, powerMOSFET are well know to provide extremely efficiency and reliability which canbe used in wide variety of applications.Drain to source voltage Vds is -55VGate to source voltage is ±20VOn resistance Rds(on) of 60mohm at Vgs of -10VPower dissipation Pd of 110W at 25°CContinuous drain current Id of -31A at Vgs -10V and 25°CJunction temperature range from -55°C to 175°CProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelDrain Source Voltage Vds: 55VContinuous Drain Current Id: 31ADrain Source On State Resistance: 0.06ohmOn Resistance Rds(on): 0.06ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 110WPower Dissipation: 110WNo. of Pins: 3PinsOperating Temperature Max: 175°C