Infineon (IRFB4020PBF) Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm

Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB4020PBF is a HEXFET single N-channel Power MOSFET utilizes the latestprocessing techniques to achieve low ON-resistance per silicon area.Furthermore, gate charge, body-diode reverse recovery and internal gateresistance are optimized to improve key class-D audio amplifier performancefactors such as efficiency, THD and EMI. Additional features of this MOSFET are175°C operating junction temperature and repetitive avalanche capability. Thesefeatures combine to make this MOSFET a highly efficient, robust and reliabledevice. It can deliver up to 300W per channel into 8R load in half-bridgeconfiguration amplifier. It is suitable for battery operated drive, full-bridgeand push-pull application.Low RDS (ON) for improved efficiencyLow Qg and Qsw for better THD and improved efficiencyLow QRR for better THD and lower EMIApplicationsAudio, Consumer Electronics, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 18ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.1ohmOn Resistance Rds(on): 0.1ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4.9VPower Dissipation Pd: 100WTransistor Case Style: TO-220ABPower Dissipation: 100WNo. of Pins: 3PinsOperating Temperature Max: 175°C