Infineon (IRFP250MPBF) Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through HoleProduct OverviewSingle N-channel HEXFET® power MOSFETAdvanced process technologyFast switchingFully avalanche ratedDynamic dv/dt ratingEase of parallelingSimple drive requirementsPlanar cell structure for wide SOAProduct qualification according to JEDEC standardTargeted for high power densityProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 30ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.075ohmOn Resistance Rds(on): 0.075ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 214WTransistor Case Style: TO-247ACPower Dissipation: 214WNo. of Pins: 3PinsOperating Temperature Max: 175°CProduct Range: HEXFET