Infineon (IRFP064NPBF) Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm

Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through HoleProduct OverviewThe IRFP064NPBF is utilizes advanced processing techniques to achieve extremelylow on-resistant per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficient and reliable devicefor use in a wide variety of applications.Dynamic dv/dt ratingFully avalanche ratedAdvanced process technologyUltra low on-resistanceFast switchingProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 55VContinuous Drain Current Id: 98ADrain Source On State Resistance: 0.008ohmOn Resistance Rds(on): 0.008ohmTransistor Case Style: TO-247ACTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 150WPower Dissipation: 150WNo. of Pins: 3PinsOperating Temperature Max: 175°C