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Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through HoleProduct OverviewThe IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely lowon-resistance per silicon area and fast switching performance. This benefit,combined with the fast switching speed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety of applications.Dynamic dv/dt ratingFully avalanche ratedAdvanced process technologyApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 55VContinuous Drain Current Id: 41ADrain Source On State Resistance: 0.0175ohmOn Resistance Rds(on): 0.0175ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 94WPower Dissipation: 94WNo. of Pins: 3PinsOperating Temperature Max: 175°CProduct Range: HEXFET Series