Infineon (IRFP9140NPBF) Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through HoleProduct OverviewThe IRFP9140NPBF is a -100V single P-channel HEXFET Power MOSFET, fifthgeneration HEXFET utilizes advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET power MOSFET is wellknown for, provides the designer with an extremely efficient and reliable devicefor use in a wide variety of applications.Advanced process technologyDynamic dV/dt ratingFully avalanche rated175°C Operating temperatureApplicationsPower ManagementProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelContinuous Drain Current Id: 23ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.117ohmOn Resistance Rds(on): 0.117ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 120WTransistor Case Style: TO-247ACPower Dissipation: 120WNo. of Pins: 3PinsOperating Temperature Max: 175°C