Infineon (IRFP260NPBF) Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm

Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through HoleProduct OverviewThe IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247ACpackage. This MOSFET features extremely low on resistance per silicon area,dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple driverequirements and fully avalanche rated as a result, power MOSFET are well knowto provide extremely efficiency and reliability which can be used in widevariety of applications.Drain to source voltage (Vds) of 200VGate to source voltage of ±20VOn resistance Rds(on) of 40mohm at Vgs 10VPower dissipation Pd of 300W at 25°CContinuous drain current Id of 50A at Vgs 10V and 25°COperating junction temperature range from -55°C to 175°CProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 50ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.04ohmOn Resistance Rds(on): 0.04ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 300WTransistor Case Style: TO-247ACPower Dissipation: 300WNo. of Pins: 3PinsOperating Temperature Max: 175°C