Onsemi (FCPF11N60) Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm

Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm, TO-220F, Through HoleProduct OverviewThe FCPF11N60 is a 600V N-channel SuperFET® high voltage super-junction MOSFETutilizes charge balance technology for outstanding low ON-resistance and lowergate charge performance. This technology is tailored to minimize conductionloss, provide superior switching performance, dV/dt rate and higher avalancheenergy. Consequently, SuperFET MOSFET is very suitable for the switching powerapplications such as PFC, server/telecom power, FPD TV power, ATX power andindustrial power applications.Ultra low gate charge (Qg = 40nC)Low effective output capacitance (Coss.eff = 95pF)100% avalanche testedApplicationsIndustrial, Power Management, Communications & Networking, LightingProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 11ADrain Source Voltage Vds: 600VDrain Source On State Resistance: 0.32ohmOn Resistance Rds(on): 0.32ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 5VPower Dissipation Pd: 36WTransistor Case Style: TO-220FPower Dissipation: 36WNo. of Pins: 3PinsOperating Temperature Max: 150°C