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Power MOSFET, N Channel, 500 V, 20 A, 0.225 ohm, TO-247, Through HoleProduct OverviewThe SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipationand high peak current capability.Halogen-free according to IEC 61249-2-21 definitionLow figure of merit Ron X Qg100% Avalanche rateddV/dt RuggednessImproved Trr/QrrImproved gate chargeApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 500VContinuous Drain Current Id: 20ADrain Source On State Resistance: 0.225ohmOn Resistance Rds(on): 0.225ohmTransistor Case Style: TO-247Transistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 5VPower Dissipation Pd: 292WPower Dissipation: 292WNo. of Pins: 3PinsOperating Temperature Max: 150°C