Infineon (IR2125PBF) Power IC, High Side And Low Side, 0V-18V Supply

Power IC, High Side And Low Side, 0V-18V Supply, 3.3A Out, 200ns Delay, DIP-8Product OverviewThe IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBTDriver with over-current limiting protection circuitry. Proprietary HVIC andlatch immune CMOS technology enables ruggedized monolithic construction. Logicinputs are compatible with standard CMOS or LSTTL outputs and down to 2.5Vlogic. The output driver features a high pulse current buffer stage designed forminimum driver cross-conduction. The protection circuitry detects over-currentin the driven power transistor and limits the gate drive voltage. Cycle-by-cycleshutdown is programmed by an external capacitor which directly controls the timeinterval between detection of the over-current limiting conditions and latchedshutdown. The floating channel can be used to drive a N-channel power MOSFET orIGBT in the high or low-side configuration which operates up to 500V.Tolerant to negative transient voltage DV/DT ImmuneUnder-voltage lockoutCurrent detection and limiting loop to limit driven power transistor currentError lead indicates fault conditions and programs shutdown timeOutput in phase with inputApplicationsIndustrial, Consumer ElectronicsProduct InformationNo. of Channels: 1ChannelsDriver Configuration: High SidePower Switch Type: IGBT, MOSFETSupply Voltage Min: 0VSupply Voltage Max: 18VDriver Case Style: DIPInput Type: Non-InvertingIC Case / Package: DIPNo. of Pins: 8PinsSource Current: 1.6AInput Delay: 170nsOutput Delay: 200nsSink Current: 3.3AOperating Temperature Min: -40°COperating Temperature Max: 125°C