Infineon (IRF3205ZPBF) Power MOSFET, Automotive, N Channel, 55 V, 110 A

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, ThroughHoleProduct OverviewThe IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latestprocessing techniques to achieve extremely low ON-resistance per silicon area.Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating. These featurescombine to make this design an extremely efficient and reliable device for usein a wide variety of applications.Advanced process technologyRepetitive avalanche allowed up to TjmaxApplicationsAutomotive, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 55VContinuous Drain Current Id: 110ADrain Source On State Resistance: 0.0065ohmOn Resistance Rds(on): 0.0065ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 170WPower Dissipation: 170WNo. of Pins: 3PinsOperating Temperature Max: 175°C