Infineon (IRLZ34NPBF) Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through HoleProduct OverviewThe IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely lowon-resistance per silicon area and fast switching performance. This benefit,combined with the fast switching speed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety of applications.Dynamic dv/dt ratingFully avalanche ratedLogic-level gate driveAdvanced process technologyApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 55VContinuous Drain Current Id: 27ADrain Source On State Resistance: 0.035ohmOn Resistance Rds(on): 0.035ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 2VPower Dissipation Pd: 56WPower Dissipation: 56WNo. of Pins: 3PinsOperating Temperature Max: 175°C