Infineon (IRFP3006PBF) Power MOSFET, N Channel, 60 V, 195 A, 0.0021 ohm

Power MOSFET, N Channel, 60 V, 195 A, 0.0021 ohm, TO-247AC, Through HoleProduct OverviewThe IRFP3006PBF is a HEXFET® N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityApplicationsPower Management, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 195ADrain Source Voltage Vds: 60VDrain Source On State Resistance: 0.0021ohmOn Resistance Rds(on): 0.0021ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 375WTransistor Case Style: TO-247ACPower Dissipation: 375WNo. of Pins: 3PinsOperating Temperature Max: 175°C