Infineon (IRFP260MPBF) Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm

Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through HoleProduct OverviewThe IRFP260MPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizeadvanced processing techniques to achieve extremely low ON-resistance persilicon area. This benefit combined with the fast switching speed and ruggedizeddevice design, provides an extremely efficient and reliable operation.Advanced process technologyDynamic dV/dt ratingFully avalanche ratingEase of parallelingSimple drive requirementsLow static drain-to-source ON-resistanceApplicationsCommercial, Industrial, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 50ADrain Source Voltage Vds: 200VDrain Source On State Resistance: 0.04ohmOn Resistance Rds(on): 0.04ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 300WTransistor Case Style: TO-247ACPower Dissipation: 300WNo. of Pins: 3PinsOperating Temperature Max: 175°C